Pgo-tech launches new products:200mm silicon wafers with 1000um thickness
Diameter: 200+/-0.2 mm
Material: Silicon
Growth Method: Cz
Orientation: <1-0-0>+/-0.5°
Type/Dopant: P/ Boron
Resistivity: 1-20 ohm-cm
Carbon Content: <=0.5 ppma
Thickness: 1000+/-20 μm
GBIR/ TTV: <=3 μm
Bow/Warp: <=30 μm
Front Surface: Polished
Localized Light Scatterers (Particles Only):<=20@>=0.2 μm
Back Surface: Etched (SEMI M1-2000)
Surface Metals: <5 E10/cm2
