Silicon Ingot - Pango Semiconductor Technology

SILICON INGOT

Product Description

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Diameter	25mm-450mm
Growth method	CZ
Dopant	P，P+；Boron
	N，N+ ; phosphorus /AS/SB；
Orientation	1-0-0/1-1-1/1-1-0
Resistiviy	P-TYPE：0.001-100 Ohm-cm
	N-TYPE：phos 0.0007-100 Ohm-cm
	Sb 0.006-0.02 Ohm-cm
	As 0.001-0.01 Ohm-cm
Oxygen content	6-18ppm(New ASTM)
Carbon content	0.5ppma Max
Metal content	5*10¹⁰/cm³Max
Surface Metal	5*10¹⁰/cm²Max
Dislocation	None